Power Electronics Pulse

Multiple recent articles highlight GaN innovation: two-channel AlGaN/GaN HFET on SiC, practical gate drive optimization, vertical GaN challenges, comprehensive review of GaN HEMT design and reliability, and double-pulse test techniques. A new split-p-GaN HEMT design achieves enhanced short-circuit capability (35% lower SC current peak, >5000-cycle survival). Infineon's rad-hard gate driver for GaN HEMTs in space. Ion implantation-enabled AlN-based devices push UWBG frontiers. NextGO Epi secured €2M for Ga2O3 epitaxial wafers (10x efficiency over SiC, 75% cost reduction). Automated defect detection for diamond semiconductors using X-ray diffraction. Low-voltage GaN surpassing MOSFETs in AI power density via ISOP converter (800V distribution, 216 kW+ racks). Fully integrated GaN power converter at 4K cryogenic temperature (37.5% lower RDS(on)). Enphase rolling out GaN microinverters to Australia/New Zealand (97.95% efficiency, 25-year warranty). EPC to showcase Gen7 GaN at PCIM Asia 2026 with devices and reference designs for AI power delivery. Ricardo develops low-cost GaN traction inverters for EVs (50/150kW, UK government-backed). Nexperia's next-gen HV GaN FET with CCPAK package targets low parasitics. Navitas and Magnachip announced a strategic partnership to accelerate GaN adoption. A new V-GaN Tech Hub test facility opened. A spectroscopy study of defects in β-Ga2O3 adds technical depth. Van der Waals epitaxy of β-Ga2O3 films on polycrystalline substrates could lower cost. A VTH-adjustable p-channel GaN FET enables complementary logic. A 1.6 kV/1.47 GW·cm−2 AlGaN/GaN Schottky barrier diode record. Accurate SPICE model development for 650V GaN transistors. STMicroelectronics expands isolated gate driver family with GaN driver. A new review article on switching oscillations in SiC/GaN devices. Teledyne HiRel introduced a new GaN gate driver with integrated isolated bias supply. **Major new: Power Integrations demonstrated world's first 2200V GaN technology using cascode architecture and sapphire substrate, challenging SiC in high-voltage domains. Gigabyte launched a 1600W GaN PSU (AORUS P1600W) showing GaN commoditization in consumer power supplies.** New research: Interface-engineered Ga2O3/(AlGaO)/GaN heterostructures for UWBG. Gallium oxide materials market report shows beta-Ga2O3 63.4% share in 2025. A comprehensive article on GaN moving to the center of AI data center power architectures. An interview with EPC's reliability VP on the 4K GaN converter. **New research: High-κ Nb2O5 gate dielectric with Al2O3 interfacial passivation for UWBG semiconductors adds device-level depth.** **New articles: Para Light introduced ThermaFlat SiC MOSFETs with ~8% resistance drift claim. KGD test and sort handlers for SiC/GaN reliability. SiC-coated diamond/Al composites for thermal management. Review on sequential channel activation in multi-channel AlGaN/AlN/GaN devices. Technical deep-dive on why CMTI ratings can be misleading in SiC-based systems.** **Latest: NoMIS Power demonstrated a 6.5 kV SiC MOSFET with >8 kV blocking, 90 mΩ, 55 A, targeting HVDC, SSTs, and traction, with a U.S. domestic supply chain angle. A functional electrothermal SPICE model for WBG devices offers practical design tool.**